Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement

► We propose a novel silicon on insulator lateral double diffused MOSFET. ► The buried insulator layer under the active region consists of two materials. ► The proposed structure is called dual material buried insulator SOI-LDMOSFET. ► We demonstrate that heat dissipation and self-heating effects can be improved. ► Results show that silicon nitride is a suitable alternative as buried insulator.