کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546387 | 997614 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of room-temperature resonant photoluminescence in porous silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Observation of room-temperature resonant photoluminescence in porous silicon Observation of room-temperature resonant photoluminescence in porous silicon](/preview/png/1546387.png)
چکیده انگلیسی
We have studied the room-temperature photoluminescence (PL) properties of freshly prepared and naturally oxidized porous silicon (p-Si) samples. The morphology and chemical composition of the p-Si samples are examined by means of scanning electron microscopy (SEM) and electron dispersion spectroscopy. Nanoscale pores are noticed in freshly prepared p-Si, with an average density of â¼4Ã109Â cmâ2. The surface-oxidation process in the p-Si is found to be slowly progressing in course of time. Using SEM, pores are not observed on the surface of the oxidized p-Si in plan-view geometry. A broad PL band consisting of multiple peaks together with the evolution of resonant peaks is evidenced in freshly prepared samples. A regular blue shift of the resonant peak energy is obtained with increasing excitation energy in all the p-Si samples. In addition, multiple peak structure is found slowly disappearing with increasing surface-oxide layer thickness followed by the gradual increment of the resonant PL intensity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 35, Issue 1, October 2006, Pages 151-156
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 35, Issue 1, October 2006, Pages 151-156
نویسندگان
A Kanjilal, M Song, K Furuya, B Mallik,