کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546533 | 997616 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The electronic properties of a coaxial square GaAs/AlxGa1−xAs quantum well wire in an electric field
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The electronic properties of a coaxial square GaAs/AlxGa1−xAs quantum well wire in an electric field The electronic properties of a coaxial square GaAs/AlxGa1−xAs quantum well wire in an electric field](/preview/png/1546533.png)
چکیده انگلیسی
The binding energy of a hydrogenic impurity in a coaxial square quantum well wire (QWW) system is investigated as a function of the barrier thickness for two different impurity positions under the electric fields. Within the effective mass approximation, the ground state energy in the presence of an external electric field applied perpendicular to the symmetry axis of the wire system is calculated using the finite difference method. Then, the ground state binding energy of a hydrogenic impurity is found employing a variational method. It is found that the binding energy in critical barrier thickness shows an increase or decrease depending on the impurity position and electric field strength.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 8, August 2009, Pages 1572–1576
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 8, August 2009, Pages 1572–1576
نویسندگان
Ş. Aktas, F.K. Boz, A. Bilekkaya, S.E. Okan,