کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546588 | 997618 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier capture and relaxation in charged quantum dots triggered by vibrational relaxation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Local polarization and the strain of the crystal lattice around the charged quantum dot in semiconductors must vibrate to relax when the mobile carrier is captured by the dot and makes it uncharged. Triggered vibrations induce the sudden perturbation of electronic states in the quantum dot. The Hamiltonian of electron interaction with a local vibrating field and carrier capture time are calculated. It is shown that the principle of uncertainty has a strong influence on this effect. The calculated values of electron capture time are on a sub-picosecond timescale at a high pumping intensity, and are strongly dependent on the scale of quantum confinement. The calculations fit well with photoluminescence rising times Ï=0.45Â ps [K. GündoÄdu, K.C. Hall, T.F. Boggess, D.G. Deppe, O.B. Shchekin, Appl. Phys. Lett. 85 (2004) 4570.] and Ï=1.7Â ps [K.W. Sun, A. Kechiantz, B.C. Lee, C.P. Lee, Appl. Phys. Lett. 88 (2006) 163117.] which are observed in the experiments on p-doped InAs quantum dots.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 3, January 2008, Pages 668-673
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 3, January 2008, Pages 668-673
نویسندگان
A.M. Kechiantz, K.W. Sun,