کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546589 | 997618 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effect on the photoluminescence of Ge-doped silica films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Annealing effect on the photoluminescence of Ge-doped silica films Annealing effect on the photoluminescence of Ge-doped silica films](/preview/png/1546589.png)
چکیده انگلیسی
SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 3, January 2008, Pages 674–679
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 3, January 2008, Pages 674–679
نویسندگان
A.G. Rolo, A. Chahboun, O. Conde, M.I. Vasilevskiy, M.J.M. Gomes,