Magnetoresistance in graphene-based multi-layers structure with the spatially modulated strength of spin–orbit interactions

Based on the transfer-matrix method, the spin-polarized transport properties of electrons through ballistic graphene-based quantum tunneling junctions with spatially modulated strength of spin–orbit interactions (SOIs) have been investigated. It is shown that magnetoresistance (MR) oscillates with the SOI strength, number of the layers, and incident energy. Application of such a phenomenon to design spin-polarized electron devices based on the graphene material is anticipated.

Graphical AbstractFor a structure with more layers, increased frequency and amplitude of the oscillations of magnetoresistance are observed. Application of such a phenomenon to design electronic devices is anticipated.Figure optionsDownload as PowerPoint slideResearch Highlights
► Large magnetoresistance can be realized by a graphene multi-layers structure.
► The magnetoresistance effect can be tuned by the number of the layers.
► The magnetoresistance effect can be modulated by incident energy.
► The magnetoresistance effect can be controlled by spin–orbit interactions.