Temperature dependent single photon emission in InP/GaInP quantum dots

Intensity correlation measurements on single InP/GaInP quantum dots (QDs) show antibunching at zero delay time, indicative of single photon emission. The antibunching time τR increases or decreases with temperature depending on the QD size as a result of the competition between: (1) thermal excitation of holes dominant in smaller QDs and (2) dark-to-bright exciton transition dominant in larger QDs. The antibunching minimum g(2)(0) remains below 0.2 up to 45 K.