کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1546970 | 997627 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittings
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittings Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittings](/preview/png/1546970.png)
چکیده انگلیسی
We have calculated the energies of the lowest four excitons (two bright states and two dark states) in an InAs/GaAs quantum dot under the longitudinal magnetic field, B. The calculations were carried out using the strain-dependent 8-band k·p theory and the configuration interaction method. At B=0, the electron-hole exchange interaction determines the splitting between the bright-state energies and that between the dark-state ones. The fine-structure splitting (bright-state splitting) is 30.7μeV. At Bâ¥1T, the Zeeman effect determines both splittings which change linearly with B with different exciton g-factors for the bright and dark states. The transition from the exchange-dominant to Zeeman-dominant splittings occurs at 0
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2532-2535
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2532-2535
نویسندگان
T. Saito, T. Nakaoka, Y. Arakawa,