کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547020 997627 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrate
چکیده انگلیسی
The surface reconstructions on InAs(111)A wetting layer grown on GaAs substrate are investigated by our ab initio-based approach incorporating the chemical potentials of In atom and As molecules in the vapor phase as functions of temperature and beam equivalent pressure. The calculated results imply that the most stable surface structure of InAs with/without lattice constraint from the substrate is the In-vacancy surface under conventional growth conditions. The In-vacancy surface is dramatically stabilized on the wetting layer, since the atoms around the In-vacancy are easily displaced to effectively lower the strain energy due to the lattice constraint from the GaAs substrate. Distinctive feature between InAs(111)A surfaces with and without lattice constraint is found in the stable adsorption sites. In adatoms favor the In-vacancy site on the InAs without lattice constraint in contrast to the interstitial sites on the InAs wetting layer. These results suggest that the surface structure and adsorption-desorption behavior on the wetting layer are crucial for investigating the growth processes of nanostructures such as quantum dots and stacking fault tetrahedrons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2731-2734
نویسندگان
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