کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547031 | 997627 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We have grown self-assembled InGaAsN/GaP quantum dots (QDs) with an In composition of 50% via the Stranski-Krastanov growth mode of molecular-beam epitaxy, obtaining high-density InGaAsN islands of 8Ã1010Â cmâ2. When the InGaAsN islands are directly exposed to the P2 beam, we observe a quantum-well-like hetero-interface using cross-sectional transmission electron microscopy (XTEM). This result indicates that the InGaAsN island density is remarkably reduced by As/P exchange reactions. To suppress these exchange reactions, we deposit Ga corresponding to 1 monolayer on the InGaAsN islands. When the Ga deposition sequence is finished, we use XTEM to detect InGaAsN islands embedded in GaP, which indicates that As/P exchange reactions can be suppressed by Ga deposition. Subsequently, we grow a multiple-stacked InGaAsN/GaP 5QDs using the Ga deposition sequence and report their room-temperature photoluminescence spectra.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2772-2776
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2772-2776
نویسندگان
K. Umeno, Y. Furukawa, N. Urakami, R. Noma, S. Mitsuyoshi, A. Wakahara, H. Yonezu,