کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547047 | 997627 | 2010 | 4 صفحه PDF | دانلود رایگان |
Ohmic contacts are crucial for both device applications and the study of fundamental physics. In this study, we propose a new physical model for Ohmic contacts based on the detailed considerations of a metal/semiconductor interface, such as charge neutrality level concept, with which it is possible to describe the real situation precisely. Our proposed model contains many defect energy levels that originate from vacancies and impurities located in the vicinity of the metal/semiconductor interface, within the energy range of the Schottky barrier height. Moreover, we calculate the current–voltage characteristics based on our model. Our calculated results show that our model reveals linear Ohmic I–V characteristics and dense defect energy level distribution in the energy range of the Schottky barrier height is crucial for obtaining Ohmic I–V characteristics.
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 42, Issue 10, September 2010, Pages 2837–2840