کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547066 | 997628 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates](/preview/png/1547066.png)
چکیده انگلیسی
We present a comparison of the band alignment of the Ga1âxInxNyAs1ây active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga1âxInxNyAs1ây quantum wells on InP substrates is better than than that of the compressively strained Ga1âxInxNyAs1ây quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga1âxInxNyAs1ây quantum wells with In concentrations of x⩽0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga1âxInxNyAs1ây active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga1âxInxNyAs1ây laser system on GaAs and InP substrates as ideal candidates for high temperature operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 2, March 2006, Pages 148-154
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 2, March 2006, Pages 148-154
نویسندگان
BeÅire Gönül, Koray Köksal, Ebru Bakır,