کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547139 | 997629 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth](/preview/png/1547139.png)
چکیده انگلیسی
Scanning transmission electron microscopy has been used to investigate the growth mechanism of gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. The composition of nickel seeds used to promote nanowire-type growth has been studied. These seeds remain at the end of the nanowires after growth as Ni-based metallic crystallites. The concentration of gallium, nickel, oxygen and nitrogen in the seeds were quantified by analysing electron energy-loss spectra. The seed crystallites at the ends of the GaN nanowires are found to comprise of a metallic core of mainly nickel and gallium, with a surrounding oxide shell consisting of Ni, Ga, and O, attributed to the post-growth atmospheric exposure of the nanowires. Only a background concentration of nitrogen was found in the metallic nickel seed cores.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 7, May 2008, Pages 2457-2461
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 7, May 2008, Pages 2457-2461
نویسندگان
L. Lari, R.T. Murray, T.J. Bullough, P.R. Chalker, M. Gass, C. Chèze, L. Geelhaar, H. Riechert,