کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547215 | 1512908 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd-Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000-1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid-liquid-solid model of nanowire formation was shown to be valid.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1â2, March 2007, Pages 158-162
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1â2, March 2007, Pages 158-162
نویسندگان
Hyun-Kyu Park, Beelyong Yang, Sang-Woo Kim, Gil-Ho Kim, Doo-Hyeb Youn, Sang-Hyeob Kim, Sung-Lyul Maeng,