کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547226 | 1512908 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantized field-electron emission at 300Â K in self-assembled arrays of silicon nanowires
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Dense ensembles of silicon nanowires were prepared by metal-catalyzed chemical vapor deposition on silicon substrates. Some of these ensembles were doped with phosphorous during growth. The nanowires were characterized using scanning electron microscopy, X-ray diffraction, and mass spectroscopy. Field emission of electrons from these structures was studied at room temperatures in ultra-high vacuum. The measurements were carried out using a parallel-plate diode cell. At high-applied fields, the current-voltage characteristics deviate from the Fowler-Nordheim law and exhibit a step-wise increase in the current with the increasing voltage at 300Â K. Possible mechanisms of the observed quantized field emission are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1â2, March 2007, Pages 212-217
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1â2, March 2007, Pages 212-217
نویسندگان
A.I. Klimovskaya, O.E. Raichev, A.A. Dadykin, Yu.M. Litvin, P.M. Lytvyn, I.V. Prokopenko, T.I. Kamins, S. Sharma, Yu. Moklyak,