کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547258 | 997631 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of three-junction electromechanical single electron transistor at zero temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characteristics of three-junction electromechanical single electron transistor at zero temperature Characteristics of three-junction electromechanical single electron transistor at zero temperature](/preview/png/1547258.png)
چکیده انگلیسی
In the single electron transistor, multiple-junction devices have different properties with two-junction devices. We investigate a model system of three-junction electromechanical single electron transistor at zero temperature. Comparing with two-junction electromechanical single electron transistor, the island movement has a greater influence on the electron tunneling. The current-drain voltage (IDS–VD) curve also has Coulomb Staircase phenomena. However, the conductance decreases with the increase of VG. A simple and effective method is applied to estimate the trend of the current curves, by analyzing the average electrostatic forces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 1, January 2006, Pages 53–56
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 1, January 2006, Pages 53–56
نویسندگان
Y. Wang, J.F. Jiang, Q.Y. Cai,