کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547336 | 997634 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of single-electron dynamics in tunnelling between zero- and one-dimensional states
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present an experimental technique for investigating the dynamics of single-electron tunnelling on a sub-nanosecond timescale without using fast gate pulses. We use surface acoustic waves (SAWs) to form dynamic quantum dots in a depleted one-dimensional channel. Each dynamic dot carries a single electron at SAW velocity â¼2800m/s. These dynamic dots are coupled to an open channel through a tunnel barrier for a length of â¼1μm. This allows each electron to tunnel out for a duration of â¼350ps. This fixed tunnel duration allows us to examine the dynamic nature of electron tunnelling without the need for gate pulses. Oscillations with â¼1% visibility are observed in the tunnel current as a function of gate voltage. We argue that these oscillations cannot be explained in the adiabatic limit, and that dynamic processes must be considered.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 5, March 2008, Pages 1017-1021
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 5, March 2008, Pages 1017-1021
نویسندگان
M. Kataoka, M.R. Astley, A.L. Thorn, C.H.W. Barnes, C.J.B. Ford, D. Anderson, G.A.C. Jones, I. Farrer, D.A. Ritchie, M. Pepper,