کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547448 997635 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mott and Efros-Shklovskii hopping conductions in porous silicon nanostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Mott and Efros-Shklovskii hopping conductions in porous silicon nanostructures
چکیده انگلیسی

Electrical conductivity of electrochemically etched porous silicon was studied over a wide temperature range from 15 to 450 K. Applicability of various electrical transport mechanisms has been critically analyzed. While the conductivity data above room temperature shows extended state conduction, lowering the temperature leads to Berthelot-type conduction (180–280 K). Further, Mott's hopping (in the range 140–180 K) and Efros-Shklovskii hopping (below 120 K) conduction are found to be operating in lower temperature ranges. A clear crossover from Mott to Efros-Shklovskii variable range hopping transport is observed at low temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 6, May 2009, Pages 1025–1028
نویسندگان
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