کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547483 997636 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots
چکیده انگلیسی
Based on the framework of effective-mass approximation and variational approach, the luminescent properties are investigated theoretically in self-formed wurtzite GaN/AlxGa1−xN single-quantum dots (QDs). Considering the three-dimensional (3D) confinement of electron and hole pair and the strong built-in electric field effects, the exciton binding energy, the emission wavelength and the oscillator strength are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of GaN/AlxGa1−xN QDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 39, Issue 2, September 2007, Pages 209-213
نویسندگان
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