کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547520 1512909 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Coulomb drag experiments in low density 2D hole bilayers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Coulomb drag experiments in low density 2D hole bilayers
چکیده انگلیسی

We performed experiments studying the Coulomb drag in low density 2D hole bilayers, with rsrs ranging from roughly 10 to 20. As the carrier density is lowered into the dilute regime, we observe a significant enhancement of the drag resistivity, such that the interlayer carrier–carrier scattering rate constitutes a major component of the single layer resistivity. In addition, anomalies to the expected temperature and in-plane magnetic field dependences are observed, and are found to correlate with similar anomalies in the single layer resistivity. These results suggests that the origin of the 2D metal–insulator transition phenomena affects both transport properties in a very similar fashion.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1–2, August 2006, Pages 63–68
نویسندگان
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