کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547534 | 1512909 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermopower evidence for Wigner crystallization in the insulating phase of two-dimensional GaAs bilayer hole systems
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on low-temperature thermopower measurements of interacting GaAs bilayer hole systems in the limit of no interlayer tunneling. These systems exhibit a reentrant insulating phase near the many-body quantum Hall state (QHS) at total filling factor ν=1, when both layers have the same density. The diffusion thermopower is expected to diverge as T-1 in the presence of an energy gap (Wigner crystal) or to vanish in the case of a disordered induced mobility gap. Our results show that, as the temperature is decreased, the diffusion thermopower exhibits a T-1 dependence in the insulating phase around ν=1. This behavior clearly indicates the opening of an energy gap at low temperature, in agreement with the formation of a pinned Wigner solid. Finally, we report on the T-dependence of the thermopower at ν=1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 120-123
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 120-123
نویسندگان
S. Faniel, E. Tutuc, E.P. De Poortere, C. Gustin, A. Vlad, L. Moldovan, S. Melinte, M. Shayegan, V. Bayot,