کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547543 1512909 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Observation of the quantum Hall effect in cleaved InAs surfaces
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Observation of the quantum Hall effect in cleaved InAs surfaces
چکیده انگلیسی

We have performed the in-plane magnetotransport measurements on the two-dimensional electron gas at the cleaved p-InAs (1 1 0) surface by deposition of Ag. The surface electron density NsNs is determined from the Hall coefficient at 1.5K. The coverage dependence of NsNs is well explained by the assumption that each adsorbed Ag atom denotes one electron into InAs until the surface Fermi level reaches the adsorbate-induced donor level. The electron mobility μμ is about 0.3T-1 and does not show a clear dependence on the coverage over 0.03ML. In the high-magnetic field regime of B>1/μB>1/μ, Shubnikov–de Hass oscillations were observed. A beating pattern due to the strong spin–orbit interaction appears for high NsNs. For lower NsNs of 1.04×1012cm-2, an apparent quantum Hall plateau for ν=4ν=4 and vanishing of the longitudinal resistivity were observed around B=10.8T.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1–2, August 2006, Pages 156–159
نویسندگان
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