کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547576 | 1512909 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence of n-doped double quantum well-electron subbands under influence of in-plane magnetic fields
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence of n-doped double quantum well-electron subbands under influence of in-plane magnetic fields Photoluminescence of n-doped double quantum well-electron subbands under influence of in-plane magnetic fields](/preview/png/1547576.png)
چکیده انگلیسی
We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high magnetic fields. Measurements were carried out on a selectively contacted symmetric p-δn-DQW-δn-p structure, which allows a variation of the electron density in DQW by a p-n bias and simultaneously a tilting of DQW, when a p-p bias is applied. Attention was paid to phenomena in in-plane magnetic fields, theoretically studied by Huang and Lyo (HL), [Phys. Rev. B 59, (1999) 7600]. In this paper, we compare our results for both symmetric and asymmetric DQWs with the theoretical model made by HL. Whereas the spectra from a symmetric DQW fully confirmed the theoretical predictions, the results gained from DQW with an electric-field-induced asymmetry did not allow a proper study of anticipated effects. The reasons for that are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 284-287
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1â2, August 2006, Pages 284-287
نویسندگان
M. Orlita, M. Byszewski, G.H. Döhler, M. Grill, P. HlÃdek, S. Malzer, M. Zvára,