کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547719 997642 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of the built-in electric field on luminescent properties in self-formed single InxGa1−xN/GaN quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Influence of the built-in electric field on luminescent properties in self-formed single InxGa1−xN/GaN quantum dots
چکیده انگلیسی
Based on the framework of effective-mass approximation and variational approach, luminescent properties are investigated theoretically in self-formed wurtzite InxGa1−xN/GaN quantum dots (QDs), considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the height L and the radius R) are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of InxGa1−xN/GaN QDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 2, July 2006, Pages 343-348
نویسندگان
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