کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547719 | 997642 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the built-in electric field on luminescent properties in self-formed single InxGa1âxN/GaN quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Based on the framework of effective-mass approximation and variational approach, luminescent properties are investigated theoretically in self-formed wurtzite InxGa1âxN/GaN quantum dots (QDs), considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the height L and the radius R) are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of InxGa1âxN/GaN QDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 2, July 2006, Pages 343-348
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 2, July 2006, Pages 343-348
نویسندگان
S.Y. Wei, X. Zhao, C.X. Xia, H.R. Wu, F. Zhang, W. Li,