کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547775 997643 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Full counting statistics for charge inside a quantum dot
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Full counting statistics for charge inside a quantum dot
چکیده انگلیسی

Measurements of the average current and its fluctuation (noise) have been powerful tools to study the quantum transport in mesoscopic systems. Recently it became possible to measure the higher moment of the current probability distribution and moreover, the current distribution itself (‘full counting statistics’ (FCS)) by using quantum point-contact charge-detectors. Motivated by recent experiments, we evaluate the FCS for the probability distribution of electron number inside a quantum dot (QD). We show that a non-Gaussian exponential distribution appears when there is no dot state close to the lead chemical potentials. We propose the measurement of the joint probability distribution of current through the QD and electron number inside the QD, which reveals correlations between the two observables and reflects the asymmetry of tunnel barriers. We also show that for increasing strength of tunneling, the quantum fluctuations qualitatively change the probability distribution of the electron number.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 40, Issue 2, December 2007, Pages 355–358
نویسندگان
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