Quantum nanostructures of paraelectric PbTe

This article provides a review of our results on nanostructurization of lead telluride, PbTe. This IV–VI group narrow-gap semiconductor exhibits paraelectric behaviour leading to a huge dielectric constant ε>1000ε>1000 at helium temperatures. Because the Coulomb potential fluctuations produced by charged defects are strongly suppressed in PbTe nanostructures, one can reach the quantum ballistic regime at significantly relaxed conditions in comparison with other systems. In particular, we observe precise zero-field conductance quantization in the wires made of modulation doped PbTe/PbEuTe quantum wells where the heavily doped layer is separated from the conducting channel only by a 2 nm thick spacer layer. The second important property is the very large Zeeman splitting. It reaches 4 meV/T. Accordingly, significant spin splitting of the conductance plateaux is observed already at fields below 1 T. Therefore, the system is attractive for the construction of local spin filters. We show that the presence of metal layers does not impair the quantum ballistic properties. Furthermore, we have developed a new method of tuning the PbTe nanostructures, using laterally placed metallic electrodes. We have found that this method is more effective than previous schemes using used p–n junctions and it provides better stability of the nanostructures.