Specific features of phototransparent properties in SiN:H films on Si (1Â 1Â 1) substrate

A correlation between resistivity-voltage dependences of the hydrogenated SiN/Si(1 1 1) films and phototransparency at λ=1.76μm was found. The contribution is both due to linear photoinduced effects as well as due to the two-photon absorption. It was revealed that with increasing of fundamental power density higher than 0.55GW/cm2 there occurs a drastic decrease of transparency. Maximal phototransparency changes are observed at about 7.5 ps and slightly increase with the increasing applied dc-electric field. Crucial role of interface trapping levels and electron-phonon interaction is shown.