کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547859 997646 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature electron mobility in a strictly 2D layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Low-temperature electron mobility in a strictly 2D layer
چکیده انگلیسی

Theoretical low-temperature electron mobility of a two-dimensional electron gas (2DEG) confined near the interface of a modulation δ-doped AlxGa1−xAs/GaAs heterostructure with a very thin width GaAs (delta well) is calculated by using Boltzmann equation and relaxation time approximation. In low temperatures the electrons are scattered from ionized impurities. Screening of the charged impurities by electrons is properly taken into account by using random phase approximation method. At last the mobility is plotted as a function of donor concentration at different temperatures and with various spacer widths.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 1, June 2006, Pages 174–177
نویسندگان
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