کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547876 | 997646 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors](/preview/png/1547876.png)
چکیده انگلیسی
We report the peak splitting and beating of Coulomb blockade oscillation in a gate-induced Si quantum dot incorporated into silicon-on-insulator metal-oxide-semiconductor field-effect transistors. The formation of double tunnel-coupled quantum dots is originated from the three-dimensional field effects in silicon-on-insulator nanowires. Beating of both the maximum and the minimum conductance is distinguished from those of many previously reported series tunnel-coupled quantum dot systems fabricated in a GaAs/AlGaAs heterostructure, and the reason for the discrepancy, the formation of parallel double tunnel-coupled quantum dots, is confirmed by a numerical simulation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 1, June 2006, Pages 273–279
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 33, Issue 1, June 2006, Pages 273–279
نویسندگان
Dae Hwan Kim,