کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547900 997648 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
چکیده انگلیسی
The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 36, Issue 2, February 2007, Pages 221-225
نویسندگان
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