کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547901 | 997648 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of β-gallium oxide nanostructures by the thermal annealing of compacted gallium nitride powder
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Various β-gallium oxide (β-Ga2O3) nanostructures such as nanowire, nanobelt, nanosheet, and nanocolumn were synthesized by the thermal annealing of compacted gallium nitride (GaN) powder in flowing nitrogen. We suggest that Ga2O3 vapor might be formed by the reaction of oxygen with the gaseous Ga formed by GaN decomposition. The Ga2O3 vapor diffuses into voids derived by compacting GaN powder and is supersaturated there, resulting in the growth of Ga2O3 nanostructures via the vapor–solid (VS) mechanism. Ga2O3 plate-like hillocks and nanostructures were also grown on the surface of a c-plane sapphire placed on the GaN pellet.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 36, Issue 2, February 2007, Pages 226–230
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 36, Issue 2, February 2007, Pages 226–230
نویسندگان
Woo-Sik Jung, Hyeong Uk Joo, Bong-Ki Min,