کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547915 1512910 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates
چکیده انگلیسی

Conventional electron-beam lithographic patterning of GaAs substrates followed by reactive-ion etching of small holes has been successfully used to control the nucleation of InAs dots. We have observed >50%>50% single dot occupancy for holes ∼60nm wide and ∼35nm deep and show that the dot occupancy and dot size can be varied by changing the size of the holes. Luminescence from an array of these site-controlled dots has been demonstrated. Thus this use of substrate patterning is a viable technique to controllably place single dots at pre-determined positions in devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 21–24
نویسندگان
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