کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547994 | 1512910 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures](/preview/png/1547994.png)
چکیده انگلیسی
Magnetotransport properties of quasi-one-dimensional (quasi-1D) quantum wires based on InGaAs/InP heterojunctions were studied. The influence of the wire width as well as of the temperature on the weak antilocalization was investigated. A crossover from the weak antilocalization to the weak localization regime was observed in the very narrow wires. The analysis of the characteristic scattering lengths suggests a strong effect of the electron confinement and diffusive boundary scattering on the suppression of the weak antilocalization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 333–336
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 333–336
نویسندگان
V.A. Guzenko, Th. Schäpers, K.M. Indlekofer, J. Knobbe,