A new approach for design and investigation of junction-less tunnel FET using electrically doped mechanism

For the first time, a distinctive approach based on electrically doped concept is used for the formation of novel double gate tunnel field effect transistor (TFET). For this, the initially heavily doped n+ substrate is converted into n+-i-n+-i (Drain-Channel-Source) by the selection of appropriate work functions of control gate (CG) and polarity gate (PG) as 4.7 eV. Further, the formation of p+ region for source is performed by applying −1.2 V at PG. Hence, the structure behave like a n+-i-n+-p+ gated TFET, whereas, the control gate is used to modulate the effective tunneling barrier width. The physical realization of delta doped n+ layer near to source region is a challenging task for improving the device performance in terms of ON current and subthreshold slope. So, the proposed work will provide a better platform for fabrication of n+-i-n+-p+ TFET with low cost and suppressed random dopant fluctuation (RDF) effects. ATLAS TCAD device simulator is used to carry out the simulation work.