Control of a resonant tunneling structure by intense laser fields

• Response of a resonance tunneling structure to laser field is exhibited.
• Resonance energy and time spent in a structure by an electron can be controlled by a laser field.
• Geometrical restrictions on a resonance tunneling structure are overcome by a laser field.

The intense laser field effects on a resonant tunneling structure were studied using computational methods. The considered structure was a GaAs/InxGa1-xAs/Al0.3Ga0.7As/InyGa1-yAs/AlAs/GaAs well-barrier system. In the presence of intense laser fields, the transmission coefficient and the dwell time of the structure were calculated depending on the depth and the width of InGaAs wells. It was shown that an intense laser field provides full control on the performance of the device as the geometrical restrictions on the resonant tunneling conditions overcome. Also, the choice of the resonant energy value becomes possible depending on the field strength.

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