Influence of different deposition potential on the structural and optical properties of copper selenide nanowires

In this paper, nanowires were successfully fabricated from the aqueous solution containing 0.2 M/l CuSO4.5H2O, 0.1 M/l SeO2, 1 g/l PVP and a few drops of H2SO4 in Milli-Q water using electrodeposition technique at room temperature. Influence of different deposition potential on structural and optical properties of copper selenide nanowires has been investigated here. Morphological, structural and optical properties were monitored through field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD) and UV-visible 1800 spectrophotometer. From the XRD analysis, it was found that the stoichiometric (CuSe) nanowires are formed at deposition potential (−0.6 V) and (+0.6 V). Band gap of nanowires were found to be maximum around 3.13 eV for deposition potential (−0.8 V) and minimum of 2.81 eV for deposition potential (−0.6 V).