کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1552499 1513204 2016 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling and analysis of a new THz source based on cylindrical FET (C-FET)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Modeling and analysis of a new THz source based on cylindrical FET (C-FET)
چکیده انگلیسی


• General dispersion relation including effect of drift velocity, relaxation time, and viscosity for C-FET.
• Plasma spectrum and their amplitude depend on the radius of C-FET.
• Analytical expression for the total radiated power.

In this work, we study mathematical modeling of a cylindrical Field Effect Transistor (C-FET) as a tera hertz (THz) emitter. General dispersion relation including effect of small drift velocity, momentum relaxation time, and electron fluid viscosity are obtained for C-FET. We show that the plasma spectrum and their amplitude depend on the radius of C-FET. The analytical expression for the total radiated power, which to our best knowledge has been derived for the first time, shows the dependency of the radiated power to various transistor parameters such as drift velocity, momentum relaxation time and electron fluid viscosity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 97, September 2016, Pages 176–185
نویسندگان
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