A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

• We propose a new structure by modification of the tunneling GNRFET.
• A dual material with different work function is used.
• The proposed structure suppressed the am-bipolar current.
• The proposed structure enjoys from better switching and off-state behavior.
• The proposed structure also shows a lesser size of DIBT and hot electron effect.

In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self-consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green’s (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure.