Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistor

• A comprehensive drain current model has been developed for Double Gate Ferroelectric Junctionless Transistor (DGFJL).
• Silicon doped hafnium oxide was used as ferroelectric layer and integrated with junctionless device.
• DGFJL transistor acts as a step-up voltage transformer and exhibits point subthreshold slope values less than 60 mV/dec.
• Device parameters such as potential, gain, subthreshold swing, threshold voltage, Id-Vgs, Id-Vds etc have been obtained.
• The analytical results have been verified with simulated results obtained using ATLAS TCAD simulator.

In this work we have proposed an analytical model for Double Gate Ferroelectric Junctionless Transistor (DGFJL), a novel device, which incorporates the advantages of both Junctionless (JL) transistor and Negative Capacitance phenomenon. A complete drain current model has been developed by using Landau-Khalatnikov equation and parabolic potential approximation to analyze device behavior in different operating regions. It has been demonstrated that DGFJL transistor acts as a step-up voltage transformer and exhibits subthreshold slope values less than 60 mV/dec. In order to assess the advantages offered by the proposed device, extensive comparative study has been done with equivalent Double Gate Junctionless Transistor (DGJL) transistor with gate insulator thickness same as ferroelectric gate stack thickness of DGFJL transistor. It is shown that incorporation of ferroelectric layer can overcome the variability issues observed in JL transistors. The device has been studied over a wide range of parameters and bias conditions to comprehensively investigate the device design guidelines to obtain a better insight into the application of DGFJL as a potential candidate for future technology nodes. The analytical results so derived from the model have been verified with simulated results obtained using ATLAS TCAD simulator and a good agreement has been found.