Effect of MnSb clusters recharge on ferromagnetism in GaSb-MnSb thin films

(a)Dependences of saturation and remnant (insert) magnetization at 300 K. (b) Temperature dependences of remnant magnetization and conductivity (in ((σRT−σ)/σRT; T) coordinates) of the GaSb-MnSb film; σRTis conductivity at T = 300 K.