Room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN film prepared via UV-assisted photo-electrochemical etching

• Influence of pores or defects in H2 sensing behavior of porous AlInGaN samples.
• Vacancy formation influenced the sensitivity of porous AlInGaN towards H2 gas.
• Adsorption and desorption of H2 gas were enhanced with respect to pore density.
• 4% KOH etched sample possessed the highest sensitivity, the shortest tres and trec.

This paper reports room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN prepared via ultraviolet-assisted photo-electrochemical etching in 1–4% diluted potassium hydroxide (KOH) solution. The highest sensitivity (S), the lowest response time and recovery time were obtained by the 4% KOH etched sample, owing to good adsorption and desorption of adsorbed H atoms over the largest surface area provided by the highest pore density. An increase in forward bias to 2.0 V has enhanced S (98.0%) of the sample while a relatively low bias of 0.5 V was sufficient to yield S of 81.9% in the sample.

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