A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

Figure: (a) 3-D view, (b) schem ati c cross-sectional view and (c) circuit symb ol of n/p-E-SiNW-SB-FET. In this article an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-E-SiNW-SB-FET and 9 mV/dec for p-E-SiNW-SB-FET for about five decades of current.238