کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1552600 | 1513208 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
III-V nitrides and performance of graphene on copper plasmonic biosensor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In the present study, the influence of iii-v nitrides as well as Ge and Si on the sensitivity and performance of a graphene protected copper plasmonic biosensor has been investigated. These semiconductors have been used between copper (Cu) and graphene layers on a SF 10 glass prism. The sensitivity and performance of the biosensor has been computed for with and without semiconductors. III-V nitrides demonstrated high sensitivity and high figure of merit (FOM) in comparison to Si and Ge due to their superior electronic and optical properties. The enhancement of evanescent electric field due to Si, Ge, AlN, GaN and InN have been computed and found highest enhancement for InN. This happens due to high refractive index of InN than other semiconductors. Analysis shows that for a high sensitive imaging biosensor the required optimal thickness of copper, InN and graphene are respectively 32 nm, 13 nm and 0.34 nm for light of wavelength λ = 633 nm (red HeNe laser). This study suggests that InN would be a better choice for fabrication of new imaging plasmonic biosensors for chemical and biological sensing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 93, May 2016, Pages 226-233
Journal: Superlattices and Microstructures - Volume 93, May 2016, Pages 226-233
نویسندگان
Goutam Mohanty, Bijaya Kumar Sahoo,