Dopingless ferroelectric tunnel FET architecture for the improvement of performance of dopingless n-channel tunnel FETs

• We propose a novel TFET based on charge plasma (CP) and negative capacitance (NC) for enhanced ON-current and steep subthreshold swing (SS).
• The proposed device enable excellent electrical characteristics in contrast with its counterpart dopingless (DL) TFET (DL-TFET).
• An optimized device accomplishes an impressive 10× improvement in on-current, 100× reduced leakage current 3× more transconductance (gm), and on-off current ratio of ∼1011 as compared to DL-TFET.

In this paper, we propose a novel tunnel field-effect transistor (TFET) based on charge plasma (CP) and negative capacitance (NC) for enhanced ON-current and steep subthreshold swing (SS). It is shown that the replacement of standard insulator for gate stack with ferroelectric (Fe) insulator yields NC and high electric field at the tunneling junction. Similarly, use of dopingless silicon nanowire with CP has a genuine advantage in process engineering. Therefore, combination of both technology boosters (CP and NC) in the proposed device enable low thermal budget, process variation immunity, and excellent electrical characteristics in contrast with its counterpart dopingless (DL) TFET (DL-TFET). An optimized device accomplishes an impressive 10× improvement in on-current, 100× reduced leakage current, 3× more transconductance (gm), and on-off current ratio of ∼1011 as compared to DL-TFET.