The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well

It is clear from Fig. that temperature dependency of ground state donor binding energy in GaAs/InGaAs/GaAs system is negligible, that is the system is very stable under temperature changes. On the other hand the hydrostatic pressure is very effective as shown in Fig. 3, the potential height and effective mass increases with increasing pressure thus increasing binding energy. The rate of increase in effective mass vs P is more pronounced in 0-7 GPa range.