Diamagnetic susceptibility: An indicator of pressure induced donor localization in a double quantum well

The influence of pressure along the growth axis on carrier localization in GaAs/Al0.3Ga0.7As Double Quantum Well (DQW) is studied under strongly coupled regime and isolated regimes of the well. The effective mass approximation combined with variation technique is adopted with the inclusion of mismatches in effective mass and dielectric constants of the well and barrier material. Effect of the barrier and well on carrier localization is investigated by observing the diamagnetic susceptibility (χdia) for various impurity locations (zi) and the critical limit of the barrier (Lb ≈ 50 Å) for tunneling has also been estimated. The effect of Γ-Χ crossover due to the application of pressure on the donor localization is picturized through diamagnetic susceptibility.