کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1552761 1513209 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Cost-effective mask-sharing technology for SOI LIGBT and PLDMOS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Cost-effective mask-sharing technology for SOI LIGBT and PLDMOS
چکیده انگلیسی
Cost-effective mask-sharing technology for the 200 V silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) and p-channel lateral double-diffused MOS (PLDMOS) are proposed in this paper. N-well and P-body implantations are shared as an N-buffer implantation of the LIGBT and P-buffer implantation of the PLDMOS, respectively, which reduces two masks compared with the conventional process. The structure and process parameters for LIGBT and PLDMOS with the new process are optimized by simulation to achieve good performance. The experimental results indicate that the LIGBT and PLDMOS using the new process maintain the same performance compared to the conventional devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 92, April 2016, Pages 359-365
نویسندگان
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