کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1552786 1513211 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Superconductivity in semiconductor structures: The excitonic mechanism
ترجمه فارسی عنوان
ابررسانایی در ساختارهای نیمه هادی: مکانیسم اکسیژن
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی


• Theoretical calculation of effective electron–electron interaction in GaAs-based microcavities.
• Theoretical evaluation of critical temperature of transition to superconducting state.
• The investigation of magnetic field influence; theoretical estimations of critical magnetic field.

We theoretically study the dependency of the superconductivity transition critical temperature (TC) on the electron and exciton–polariton densities in layered systems, where superconductivity is mediated by a Bose-Einstein condensate of exciton–polaritons. The critical temperature increases with the polariton density, but decreases with the electron gas density, surprisingly. This makes doped semiconductor structures with shallow Fermi energies better adapted for observation of the exciton–polariton-induced superconductivity than metallic layers. For realistic GaAs-based microcavities containing doped and neutral quantum wells we estimate TCTC as close to 50 K. Superconductivity is suppressed by magnetic fields of the order of 4 T due to the Fermi surface renormalization.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 90, February 2016, Pages 170–175
نویسندگان
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