The formation of indirect excitons in atomic layer doped systems

• Atomic layer doped structure in GaAs.
• Thomas–Fermi approximation for the Hartree potential.
• Indirect excitons calculated by exact Hamiltonian diagonalization.
• Exciton binding energy as function of inter-doping layer distance.
• Linear and nonlinear inter-exciton-state optical absorption coefficients.

The investigation on the formation of indirect exciton states in atomic layer doped structures is presented. A GaAs-based system with n-type and p-type delta-doping layers is proposed and the separately confined electron and hole states are calculated in the effective mass approximation, with the exciton states being determined trough a diagonalization of the Hamiltonian for the electrostatically coupled electron–hole system. The binding energy of the s-type electron-heavy-hole-like exciton state is calculated as a function of the inter-doping-layer distance and the optical absorption coefficient related with inter-exciton-state transitions is reported.