Electron-related Raman scattering in dilute nitride GaAs/InxGa1−xNyAs1−y cylindrically shaped quantum dots

• Cylindrically-shaped quantum dot.
• Dilute nitride (GaAs/InxGa1−xNyAs1−y) containing system.
• Intersubband electron-related Raman scattering.
• Influence of externally applied DC electric field.

The investigation of the intersubband electron Raman scattering differential cross-section in dilute nitride GaAs/InxGa1−xNyAs1−y cylindrical quantum dots is presented. The electron states are calculated with the inclusion of the effects of an externally applied static electric field. The secondary radiation differential cross section is reported as a function of the emitted photon energy for different values of the field and the vertical size of the quantum dot.